摘要 |
<p>This disclosure describes systems, methods, and apparatuses for generating an ionizing electromagnetic field via a remote plasma source such that the field controllably extends through a field projection portion where the field attenuates, to a plasma processing portion where the field is attenuated but still strong enough to sustain a plasma. The plasma has a low voltage and RF energy and can be used for a variety of semiconductor and thin film processing operations including chamber cleaning via radical generation, etching, and deposition.</p> |
申请人 |
ADVANCED ENERGY INDUSTRIES, INC.;HOFFMAN, DANIEL, J.;CARTER, DANIEL;PETERSON, KAREN;GRILLEY, RANDY |
发明人 |
HOFFMAN, DANIEL, J.;CARTER, DANIEL;PETERSON, KAREN;GRILLEY, RANDY |