发明名称 METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM
摘要 A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.
申请公布号 US2013004900(A1) 申请公布日期 2013.01.03
申请号 US201213609373 申请日期 2012.09.11
申请人 JSR CORPORATION;KONNO YOUSUKE;YOSHIMURA NAKAATSU;TOYOKAWA FUMIHIRO;SUGITA HIKARU 发明人 KONNO YOUSUKE;YOSHIMURA NAKAATSU;TOYOKAWA FUMIHIRO;SUGITA HIKARU
分类号 B05D7/24;B05D3/10;C09D5/00;G03F7/20 主分类号 B05D7/24
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