| 发明名称 |
High C content molecules for C implant |
| 摘要 |
The present invention provides molecules with high carbon content for Carbon-containing species implant in semiconductor material. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
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| 申请公布号 |
US8343860(B1) |
申请公布日期 |
2013.01.01 |
| 申请号 |
US201113041127 |
申请日期 |
2011.03.04 |
| 申请人 |
L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE;AMERICAN AIR LIQUIDE, INC.;OMARJEE VINCENT M.;DUSSARRAT CHRISTIAN;GIRARD JEAN-MARC;BLASCO NICOLAS |
发明人 |
OMARJEE VINCENT M.;DUSSARRAT CHRISTIAN;GIRARD JEAN-MARC;BLASCO NICOLAS |
| 分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
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