发明名称 Internal voltage generating circuit of phase change random access memory device and method thereof
摘要 An internal voltage generating circuit includes a divided voltage generator configured to generate a divided voltage by dividing a feedback internal voltage level at a division ratio corresponding to an operation mode control signal, a voltage detector configured to detect a level of the divided voltage based on a reference voltage level, an internal voltage generator configured to receive a supply voltage as power source and generate the internal voltage in response to an output signal of the voltage detector, and an under-driving unit configured to under-drive an internal voltage terminal to a supply voltage in an under-driving operation region that is determined in response to the operation mode control signal.
申请公布号 US8345502(B2) 申请公布日期 2013.01.01
申请号 US20090489931 申请日期 2009.06.23
申请人 HYNIX SEMICONDUCTOR, INC.;SHIN YOON-JAE 发明人 SHIN YOON-JAE
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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