发明名称 |
Silicon layer for stopping dislocation propagation |
摘要 |
A composite semiconductor structure and method of forming the same are provided. The composite semiconductor structure includes a first silicon-containing compound layer comprising an element selected from the group consisting essentially of germanium and carbon; a silicon layer on the first silicon-containing compound layer, wherein the silicon layer comprises substantially pure silicon; and a second silicon-containing compound layer comprising the element on the silicon layer. The first and the second silicon-containing compound layers have substantially lower silicon concentrations than the silicon layer. The composite semiconductor structure may be formed as source/drain regions of metal-oxide-semiconductor (MOS) devices.
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申请公布号 |
US8344447(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20070732889 |
申请日期 |
2007.04.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;LIN HSIEN-HSIN;CHANG WENG;SU CHIEN-CHANG;CHEN KUAN-YU;SUNG HSUEH-CHANG;YU MING-HUA |
发明人 |
LIN HSIEN-HSIN;CHANG WENG;SU CHIEN-CHANG;CHEN KUAN-YU;SUNG HSUEH-CHANG;YU MING-HUA |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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