| 摘要 |
Methods and systems for addressing threshold voltage shifts of memory cells. A method includes reading a pattern of data from a first plurality of memory cells, comparing the read of the pattern of data with a known pattern of data using a reference, and if the read of the pattern of data and the known pattern of data do not match, adjusting the reference to find a reference level that results in a matching of a read of the pattern of data and the known pattern of data. Thereafter, trim sector data is read into a second plurality of memory cells using the adjusted reference level.
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