发明名称 |
SEMICONDUCTOR DEVICE AND DRIVING METHOD FOR THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel structure, in which variation in threshold voltage of a memory cell after writing is suppressed to reduce operation voltage or to increase memory capacity. <P>SOLUTION: A semiconductor device comprises: a plurality of memory cells each including a transistor formed using an oxide semiconductor and a transistor formed using a material other than the oxide semiconductor; a driving circuit for driving the plurality of memory cells; and a potential generation circuit for generating a plurality of potentials to be supplied to the driving circuit. The driving circuit includes: a data buffer; a writing circuit writing as data, any one of the plurality of potentials to each of the memory cells; a readout circuit for reading out the data written in the memory cells; and a verification circuit for verifying whether the readout data matches the data held by the data buffer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012256398(A) |
申请公布日期 |
2012.12.27 |
申请号 |
JP20110168951 |
申请日期 |
2011.08.02 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SEKINE YUSUKE;KATO KIYOSHI |
分类号 |
G11C11/405;G11C11/407;G11C11/56;H01L21/336;H01L21/8242;H01L27/10;H01L27/105;H01L27/108;H01L29/788;H01L29/792 |
主分类号 |
G11C11/405 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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