| 摘要 |
FIELD: electricity.SUBSTANCE: in the method for development of a mask on a surface of a resist, including application of a layer of a polymer resist onto a substrate surface, and such layer is produced from monomer links on the basis of organic molecules, exposure of a resist, thermal treatment of the exposed resist and subsequent development of the structure created in the resist, at least one atom of fluorine is included into composition of at least 50% of monomer links, and thermal treatment of the exposed resist includes its heating, at least by one laser pulse, the radiation wave length of which is selected on the basis of the condition that the coefficient of laser radiation absorption with a resist exceeds the coefficient of laser radiation absorption with a substrate.EFFECT: higher efficiency of lithography of high resolution, first of all, EUV-lithography.5 cl |
