| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce the size of a bit line contact by forming a spacer of prescribed thickness on a bit line contact hole sidewall. CONSTITUTION: A semiconductor substrate is equipped in an active area(100A) defined with an element isolation film(110). A gate line(120) extended to one-way direction is formed in the active area. An insulating layer is formed on the semiconductor substrate which forms the gate line. A bit line contact hole which exposes a bit line contact area(C1) by passing through the insulating layer is formed. A spacer is formed on a sidewall of the bit line contact hole.</p> |
