发明名称 |
Uncooled infrared image sensor |
摘要 |
An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit. |
申请公布号 |
US8338902(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US201113050512 |
申请日期 |
2011.03.17 |
申请人 |
KWON HONAM;FUNAKI HIDEYUKI;HONDA HIROTO;YAGI HITOSHI;FUJIWARA IKUO;ATSUTA MASAKI;SUZUKI KAZUHIRO;SASAKI KEITA;ISHII KOICHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KWON HONAM;FUNAKI HIDEYUKI;HONDA HIROTO;YAGI HITOSHI;FUJIWARA IKUO;ATSUTA MASAKI;SUZUKI KAZUHIRO;SASAKI KEITA;ISHII KOICHI |
分类号 |
H01L31/024 |
主分类号 |
H01L31/024 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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