发明名称 |
APPARATUS FOR FABRICATING INGOT |
摘要 |
PURPOSE: An ingot manufacturing apparatus is provided to increase the growth rate of a single crystal by maintaining high temperatures for a raw material using a secondary heating unit. CONSTITUTION: A crucible(100) receives a raw material(130). A secondary heating unit(120) is arranged in the crucible. The secondary heating unit is arranged within the raw material. The secondary heating unit is extended in a longitudinal direction of the crucible at the bottom of the crucible. Secondary heating units are formed to be separated from each other.
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申请公布号 |
KR20120138110(A) |
申请公布日期 |
2012.12.24 |
申请号 |
KR20110057427 |
申请日期 |
2011.06.14 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
HEO, SEON;SHIN, DONG GEUN |
分类号 |
C30B23/00;C30B29/36;H01L21/02 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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