发明名称 APPARATUS FOR FABRICATING INGOT
摘要 PURPOSE: An ingot manufacturing apparatus is provided to increase the growth rate of a single crystal by maintaining high temperatures for a raw material using a secondary heating unit. CONSTITUTION: A crucible(100) receives a raw material(130). A secondary heating unit(120) is arranged in the crucible. The secondary heating unit is arranged within the raw material. The secondary heating unit is extended in a longitudinal direction of the crucible at the bottom of the crucible. Secondary heating units are formed to be separated from each other.
申请公布号 KR20120138110(A) 申请公布日期 2012.12.24
申请号 KR20110057427 申请日期 2011.06.14
申请人 LG INNOTEK CO., LTD. 发明人 HEO, SEON;SHIN, DONG GEUN
分类号 C30B23/00;C30B29/36;H01L21/02 主分类号 C30B23/00
代理机构 代理人
主权项
地址