发明名称 |
METHOD FOR FORMING TWO DEVICE WAFERS FROM A SINGLE BASE SUBSTRATE UTILIZING A CONTROLLED SPALLING PROCESS |
摘要 |
The present disclosure provides a method for forming two device wafers starting from a single base substrate. The method includes first providing a structure which includes a base substrate with device layers located on, or within, a topmost surface and a bottommost surface of the base substrate. The base substrate may have double side polished surfaces. The structure including the device layers is spalled in a region within the base substrate that is between the device layers. The spalling provides a first device wafer including a portion of the base substrate and one of the device layers, and a second device wafer including another portion of the base substrate and the other of the device layer. |
申请公布号 |
US2012322230(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201113159877 |
申请日期 |
2011.06.14 |
申请人 |
BEDELL STEPHEN W.;FOGEL KEITH E.;LAURO PAUL A.;SADANA DEVENDRA K.;SHAHRJERDI DAVOOD;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;FOGEL KEITH E.;LAURO PAUL A.;SADANA DEVENDRA K.;SHAHRJERDI DAVOOD |
分类号 |
H01L21/78 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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