发明名称 METHOD FOR FORMING TWO DEVICE WAFERS FROM A SINGLE BASE SUBSTRATE UTILIZING A CONTROLLED SPALLING PROCESS
摘要 The present disclosure provides a method for forming two device wafers starting from a single base substrate. The method includes first providing a structure which includes a base substrate with device layers located on, or within, a topmost surface and a bottommost surface of the base substrate. The base substrate may have double side polished surfaces. The structure including the device layers is spalled in a region within the base substrate that is between the device layers. The spalling provides a first device wafer including a portion of the base substrate and one of the device layers, and a second device wafer including another portion of the base substrate and the other of the device layer.
申请公布号 US2012322230(A1) 申请公布日期 2012.12.20
申请号 US201113159877 申请日期 2011.06.14
申请人 BEDELL STEPHEN W.;FOGEL KEITH E.;LAURO PAUL A.;SADANA DEVENDRA K.;SHAHRJERDI DAVOOD;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BEDELL STEPHEN W.;FOGEL KEITH E.;LAURO PAUL A.;SADANA DEVENDRA K.;SHAHRJERDI DAVOOD
分类号 H01L21/78 主分类号 H01L21/78
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