发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of generating high-performance random numbers and improving prediction difficulty. <P>SOLUTION: A semiconductor memory device includes at least: a memory cell array 11 where a plurality of memory cells MC is disposed; a random number generation circuit 16 for generating random numbers; and a controller 19 for controlling the memory cell array 11 and the random number generation circuit 16. The random number generation circuit 16 includes a random number control circuit 162 for generating a random number parameter (PRESET) based on results of reading the memory cell MC by a generated control parameter (read voltage parameter) and a pseudo random number generation circuit 161 for generating random numbers using the random number parameter (PRESET) as a seed value. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012252195(A) |
申请公布日期 |
2012.12.20 |
申请号 |
JP20110125282 |
申请日期 |
2011.06.03 |
申请人 |
TOSHIBA CORP |
发明人 |
NAGAI YUJI;INOUE ATSUSHI;TAKEYAMA YOSHIKAZU |
分类号 |
G09C1/00;G06F7/58;G06K19/10;H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G09C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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