发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of generating high-performance random numbers and improving prediction difficulty. <P>SOLUTION: A semiconductor memory device includes at least: a memory cell array 11 where a plurality of memory cells MC is disposed; a random number generation circuit 16 for generating random numbers; and a controller 19 for controlling the memory cell array 11 and the random number generation circuit 16. The random number generation circuit 16 includes a random number control circuit 162 for generating a random number parameter (PRESET) based on results of reading the memory cell MC by a generated control parameter (read voltage parameter) and a pseudo random number generation circuit 161 for generating random numbers using the random number parameter (PRESET) as a seed value. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012252195(A) 申请公布日期 2012.12.20
申请号 JP20110125282 申请日期 2011.06.03
申请人 TOSHIBA CORP 发明人 NAGAI YUJI;INOUE ATSUSHI;TAKEYAMA YOSHIKAZU
分类号 G09C1/00;G06F7/58;G06K19/10;H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G09C1/00
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