Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making

摘要

MULTI-LAYER N-TYPE STACK FOR CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MAKING Thin film photovoltaic devices (10) are provided that generally include a transparent conductive oxide layer (14) on the glass (12), a multi-layer n-type stack (16) on the transparent conductive oxide layer (14), and a cadmium telluride layer (20) on the multi-layer n-type stack (16). The multi-layer n-type stack (16) generally includes a first layer (17) and a second layer (18), where the first layer (17) comprises cadmium and sulfur and the second layer (18) comprises cadmium and oxygen. The multi-layer n-type stack (16) can, in certain embodiments, include additional layers (e.g., a third layer (19), a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices (10). 32 Forming a TCO layer on a glass substrate 34 Optionally, forming a RTB layer on the TCO layer 36 Forming a first layer of a multi-layer window stack on the TCO layer 38 Forming a second layer of the multi layer window stack on the TCO layer 40 Optionally, forming a third layer of a the multi-layer window stack on the TCO layer 42 Forming a cadmium telluride layer on the multi-layer window stack Fig. 10