| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a TFT, which allows reduction in electrical resistance of power supply wiring without increasing an on-current. <P>SOLUTION: A semiconductor device comprises: an insulating film II4 that has a surface; a semiconductor layer that is formed on the surface of the insulating film II4 and includes a channel region TP2 and a pair of source and drain regions TP1 and TP4 sandwiching the channel region TP2; and power supply wiring TP1 for supplying power to the source region TP1. A recess TR is formed on the surface of the insulating film II4. The power supply wiring TP1 includes a layer formed from the same layer as the semiconductor layer and has a first portion TP1A formed on the surface of the insulating film II4 and a second portion TP1B formed in the recess. The entire bottom surface of the second portion TP1B is covered with the insulating film II4. <P>COPYRIGHT: (C)2013,JPO&INPIT |
