发明名称 |
Method for fabricating nitride-based semiconductor device having electrode on m-plane |
摘要 |
A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
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申请公布号 |
US8334199(B2) |
申请公布日期 |
2012.12.18 |
申请号 |
US20100937758 |
申请日期 |
2010.03.17 |
申请人 |
OYA MITSUAKI;YOKOGAWA TOSHIYA;YAMADA ATSUSHI;ISOZAKI AKIHIRO;PANASONIC CORPORATION |
发明人 |
OYA MITSUAKI;YOKOGAWA TOSHIYA;YAMADA ATSUSHI;ISOZAKI AKIHIRO |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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