发明名称 METHOD AND SYSTEM FOR PROVIDING AUTOMATIC GATE BIAS AND BIAS SEQUENCING FOR FIELD EFFECT TRANSISTORS
摘要 A feedback gate bias circuit for use in radio frequency amplifiers to more effectively control operation of LDFET, GaNFET, GaAsFET, and JFET type transistors used in such circuits. A transistor gate bias circuit that senses drain current and automatically adjusts or biases the gate voltage to maintain drain current independently of temperature, time, input drive, frequency, as well as from device to device variations. Additional circuits to provide temperature compensation, RF power monitoring and drain current control, RF output power leveler, high power gain block, and optional digital control of various functions. A gate bias circuit including a bias sequencer and negative voltage deriver for operation of N-channel depletion mode devices.
申请公布号 US2012313709(A1) 申请公布日期 2012.12.13
申请号 US201213481906 申请日期 2012.05.28
申请人 LAUTZENHISER LLOYD 发明人 LAUTZENHISER LLOYD
分类号 H03G3/30 主分类号 H03G3/30
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