FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To relax the electric field of a drain end of a gate electrode and reduce the breakage of a gate insulating film.

SOLUTION: A field-effect transistor 100 comprises: a channel layer 108 that is made form a nitride semiconductor; an electron supply layer 112 that is formed above the channel layer 108 and is made from a nitride semiconductor having a larger band gap energy than the channel layer; a source electrode 116 and a drain electrode 118 that are formed above the channel layer 108; a gate electrode 120 that is formed above the channel layer 108; a hole extracting portion 126 that is formed above the channel layer 108 and extracts holes from the channel layer 108; and a connection portion 124 that electrically connects the gate electrode 120 and the hole extracting portion 126.

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