METHOD FOR PREPARING SEMICONDUCTOR DEVICE

摘要

A method for preparing a semiconductor device, including: providing a semiconductor substrate (S1), and forming a dummy gate structure on the semiconductor substrate and side walls surrounding the dummy gate structure; taking the dummy gate structure and the side walls as a mask, and forming a source/drain area on either side of the gate structure and embedded in the semiconductor substrate; forming an inter-layer dielectric layer on an upper surface of the semiconductor substrate, with the upper surface of the inter-layer dielectric layer being flush with an upper surface of the dummy gate structure; removing at least part of the dummy gate structure so as to form a trench between the side walls, and taking the inter-layer dielectric layer and the side walls as a mask to perform inclined ion implantation on the semiconductor substrate so as to form an asymmetrical halo implantation region (S8); and forming a gate dielectric layer and a metal gate in the trench in succession (S10). The method prevents the halo implanted ion from entering the source/drain region, reducing the source/drain junction capacitance; and the asymmetric halo implantation region can reduce the static power dissipation of the semiconductor device.