3-DIMENSIONAL NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME

摘要

Embodiments according to the present invention relate to a 3-dimensional non-volatile memory device and a method of manufacturing same. The 3-dimensional non-volatile memory device according to an embodiment includes: a plurality of conductive lines spaced apart from each other in parallel; a plurality of flat plates crossing the plurality of conductive lines, and being spaced apart from each other in parallel; and non-volatile information storage layer patterns respectively disposed between intersecting areas of the plurality of conductive lines and the plurality of conductive flat plates.