发明名称 |
Method for forming a semiconductor device having nanocrystals |
摘要 |
A method is provided for forming a semiconductor device having nanocrystals. The method includes: forming a first insulating layer over a surface of a substrate; forming a first plurality of nanocrystals on the first insulating layer; implanting a first material into the first insulating layer; and annealing the first material to form a second plurality of nanocrystals in the first insulating layer. The method may be used to provide a charge storage layer for a non-volatile memory having a greater nanocrystal density. |
申请公布号 |
US8329544(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US201113085238 |
申请日期 |
2011.04.12 |
申请人 |
KANG SUNG-TAEG;YATER JANE A.;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
KANG SUNG-TAEG;YATER JANE A. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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