| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a charged-particle-beam lithography apparatus and a lithography method that are capable of increasing a throughput by reducing a time necessary for a recovering process. <P>SOLUTION: A charged-particle-beam lithography apparatus comprises: a lithography unit 2 that forms a pattern in a sample placed on a movable stage 61; a deflection controller 32 that controls deflection of a charged particle beam; a stage controller 36 that controls movement of the stage 61; and a controller 3 formed by a control computer 31 that controls the deflection controller 32 and the stage controller 36. The deflection controller 32 includes: a buffer memory 32b for storing lithography data; a FIFO 32c for storing lithography data transferred from the buffer memory 32b; and a determining unit 32d that, in a case where, as the result of determining the amount of lithography data transferred to the FIFO 32c, lithography data stored in the buffer memory 32b is less than a set amount, instructs the stage controller 36 to stop the stage 61 and performs a recovering process that returns the stage 61 to a position at which lithography is to be performed on the sample. <P>COPYRIGHT: (C)2013,JPO&INPIT |
