| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma source achieved in a deposition condition, low in damage and high in reactivity and a method for forming a thin film, in order to continuously forming a high quality compound thin film or organic thin film with high productivity, specifically, to improve target usage efficiency in a conventional sputtering method and generate high density magnetron plasma for obtaining a favorable film quality in the vicinity of a base material even if the kinetic energy of particles incident to the base material is sufficiently relieved. <P>SOLUTION: A plasma source includes at least a pair of flat plate type magnetron plates facing each other, and only one of the facing flat plate type magnetron plates is a sputter cathode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
