| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device capable of reducing processing time by optimizing the execution timing of error detection correction processes. <P>SOLUTION: A memory cell array includes a variable resistive element that stores information by using the electrical resistance state of a variable resistor. If the memory cell array receives a write command, an input and output buffer outputs write data to a writing control unit 8 and an ECC control unit 6. The writing control unit 8 divides the write data into a predetermined number of separate data pieces and performs a data write process in which the separate data pieces are written in data banks BD1 to BDx, respectively. Concurrently with the write data process, the ECC control unit 6 performs an error correction code generation process against the write data or each of the separate data pieces to generate a first error correction code. The writing control unit 8 performs a code write process in which first inspection data is written in an ECC bank BE. <P>COPYRIGHT: (C)2013,JPO&INPIT |
