摘要 |
The invention relates to a device for detecting electromagnetic radiation in the THz frequency range, comprising at least one transistor (FET1, FET2), which has a first electrode (D), a second electrode (S), a control electrode (G), and a channel between the first electrode (D) and the second electrode (S), and comprising an antenna structure (2). The aim of the invention is to provide a device for detecting electromagnetic radiation in the THz frequency range with an increased flexibility in the circuit design and an improved robustness. According to the invention, this is achieved in that the first electrode (D) or the second electrode (S) of the transistor (FET1, FET2) is connected to the antenna structure (1) in an electrically conductive manner such that an electromagnetic signal which lies in the THz-frequency range and which is received by the antenna structure (1) can be fed into the channel between the first electrode (D) and the second electrode (S) of the transistor (FET1, FET2), and the control electrode (G) is connected to the first electrode (D) or to the second electrode (S) via an external capacitor (C1, C2) and/or the control electrode (G) and the first electrode (D) or the control electrode (G) and the second electrode (S) have an intrinsic capacitor such that no AC voltage drop occurs between the control electrode (G) and the first electrode (D) or the second electrode (S). |
申请人 |
JOHANN WOLFGANG GOETHE-UNIVERSITAET FRANKFURT A. M.;BOPPEL, SEBASTIAN;LISAUSKAS, ALVYDAS;ROSKOS, HARTMUT;KROZER, VIKTOR |
发明人 |
BOPPEL, SEBASTIAN;LISAUSKAS, ALVYDAS;ROSKOS, HARTMUT;KROZER, VIKTOR |