发明名称 SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To suppress the operation delay occurring when a semiconductor device amplifying an error of two potentials and outputting it returns from the standby state. <P>SOLUTION: By a transistor in which a channel is formed in an oxide semiconductor layer, an electrical connection of an output terminal of a transconductance amplifier and one electrode of a capacitor is controlled. Consequently, in the case where the transconductance amplifier is in the standby state, charges can be retained over a long time at the one electrode of the capacitor by causing the transistor to be in an Off state. On the other hand, when the transconductance amplifier returns from the standby state, the charging and discharging of the capacitor can be promptly converged by causing the transistor to be in an On state. As a result, the operation of the semiconductor device can be promptly in a steady state. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012239166(A) 申请公布日期 2012.12.06
申请号 JP20120099396 申请日期 2012.04.25
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 WATANABE KAZUNORI
分类号 H03F3/217;H01L21/822;H01L27/04;H01L29/786;H02M3/155 主分类号 H03F3/217
代理机构 代理人
主权项
地址