发明名称 Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal
摘要 Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.
申请公布号 US8323402(B2) 申请公布日期 2012.12.04
申请号 US20080595957 申请日期 2008.12.19
申请人 TANIZAKI KEISUKE;MIZUHARA NAHO;MIYANAGA MICHIMASA;NAKAHATA HIDEAKI;YAMAMOTO YOSHIYUKI;SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 TANIZAKI KEISUKE;MIZUHARA NAHO;MIYANAGA MICHIMASA;NAKAHATA HIDEAKI;YAMAMOTO YOSHIYUKI
分类号 C30B1/10 主分类号 C30B1/10
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