发明名称 |
NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE |
摘要 |
According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.
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申请公布号 |
US2012299015(A1) |
申请公布日期 |
2012.11.29 |
申请号 |
US201213405985 |
申请日期 |
2012.02.27 |
申请人 |
TACHIBANA KOICHI;YOSHIDA HISASHI;ONO HIROSHI;NAGO HAJIME;HARADA YOSHIYUKI;HIKOSAKA TOSHIKI;SUGAI MAKI;OKA TOSHIYUKI;NUNOUE SHINYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
TACHIBANA KOICHI;YOSHIDA HISASHI;ONO HIROSHI;NAGO HAJIME;HARADA YOSHIYUKI;HIKOSAKA TOSHIKI;SUGAI MAKI;OKA TOSHIYUKI;NUNOUE SHINYA |
分类号 |
H01L33/20;H01L29/04 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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