| 摘要 |
<p>PURPOSE: A memory device is provided to implement high integration by laminating a buffer on a level shifter using a transistor with a channel region in an oxide semiconductor layer. CONSTITUTION: A level shifter(L) includes a first input terminal(IN), a second input terminal, a first output terminal, and a second output terminal. A first buffer(B1) includes a third input terminal, a fourth input terminal, and a third output terminal. The third input terminal is electrically connected to the first output terminal. The third output terminal is electrically connected to the second input terminal. A second buffer(B2) includes a fifth input terminal, a sixth input terminal, and a fourth output terminal. A fifth input terminal is electrically connected to the second output terminal. A fourth output terminal is electrically connected to the first input terminal.</p> |
