发明名称 Semiconductor power switch having nanowires
摘要 A semiconductor power switch and method is disclosed. In one Embodiment, the semiconductor power switch has a source contact, a drain contact, a semiconductor structure which is provided between the source contact and the drain contact, and a gate which can be used to control a current flow through the semiconductor structure between the source contact and the drain contact. The semiconductor structure has a plurality of nanowires which are connected in parallel and are arranged in such a manner that each nanowire forms an electrical connection between the source contact and the drain contact.
申请公布号 US8319259(B2) 申请公布日期 2012.11.27
申请号 US20080587062 申请日期 2008.08.19
申请人 KREUPL FRANZ;SEIDEL ROBERT;INFINEON TECHNOLOGIES AG 发明人 KREUPL FRANZ;SEIDEL ROBERT
分类号 H01L29/76;B82B1/00;H01L21/335;H01L29/06;H01L29/12;H01L29/16;H01L29/775;H01L29/78;H01L51/30 主分类号 H01L29/76
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