发明名称 |
Semiconductor power switch having nanowires |
摘要 |
A semiconductor power switch and method is disclosed. In one Embodiment, the semiconductor power switch has a source contact, a drain contact, a semiconductor structure which is provided between the source contact and the drain contact, and a gate which can be used to control a current flow through the semiconductor structure between the source contact and the drain contact. The semiconductor structure has a plurality of nanowires which are connected in parallel and are arranged in such a manner that each nanowire forms an electrical connection between the source contact and the drain contact. |
申请公布号 |
US8319259(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20080587062 |
申请日期 |
2008.08.19 |
申请人 |
KREUPL FRANZ;SEIDEL ROBERT;INFINEON TECHNOLOGIES AG |
发明人 |
KREUPL FRANZ;SEIDEL ROBERT |
分类号 |
H01L29/76;B82B1/00;H01L21/335;H01L29/06;H01L29/12;H01L29/16;H01L29/775;H01L29/78;H01L51/30 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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