| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a dual metal gate structure capable of obtaining a suitable threshold voltage Vt for further microfabrication. <P>SOLUTION: A gate electrode 120b includes a first metal-containing film 114b having a first work function and a second metal-containing film 117b formed on the first metal-containing film 114b and having a second work function. A gate electrode 120a does not include a first metal-containing film 114 but includes a second metal-containing film 117a. A diffusion prevention layer 115b is formed between the first metal-containing layer 114b and the second metal-containing layer 117b in the gate electrode 120b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
