| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve reliability by preventing the generation of void on an anisotropy conductive element. CONSTITUTION: A first structure(10) comprises a first connection electrode(11) and a dam. The dam comprises one or more through-holes. A second structure(20) comprises a second connection electrode(21) and a bump(30). An anisotropy conductive element(50) comprises insulating member(51) and a solder particle(52) arranged inside the insulating member. A solder joint layer(60) electrically connects the bump to the first connection electrode. A space between the first structure and the second structure is filled with the anisotropy conductive element. |
