| 摘要 |
PURPOSE: A high electron mobility transistor and a manufacturing method thereof are provided to strengthen threshold voltage performance by controlling the depth of a recess region formed on a channel supply layer. CONSTITUTION: A channel layer(C1) comprises 2DEG(2 Dimensional Electron Gas). A channel supply layer(CS1) comprises an etching stopping layer and a top layer. The channel supply layer has a recess region(R1). A gate electrode comprises the recess region of the channel supply layer. A source electrode and a drain electrode are included on both sides of the gate electrode. A bottom layer is formed between the channel supply layer and the etching stopping layer.
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