MANUFACTURING METHOD FOR GROUP 13 ELEMENT NITRIDE CRYSTAL, GROUP 13 ELEMENT NITRIDE CRYSTAL OBTAINED BY THE MANUFACTURING METHOD, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a group 13 element nitride crystal inexpensively on an industrial basis which maintains sufficient crystal growth rate stably and continuously.

SOLUTION: In the method for manufacturing a group 13 element nitride crystal, a group 13 element nitride crystal is grown within a liquid phase 9 containing at least an alkali metal element or an alkaline-earth metal element, a group 13 element, and nitrogen element while removing the alkali metal element or the alkaline-earth metal element from the liquid phase. The removing rate of the alkali metal element or the alkaline-earth metal element from the liquid phase is ≥0.0020 mg/h/cm3.

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