| 摘要 |
PURPOSE: A method for manufacturing a hole pattern is provided to prevent the non-uniformity of a pattern and an etching due to an asymmetric structure by previously removing a spacer pattern with the asymmetric structure before a lower layer is etched. CONSTITUTION: A first carbon film(12) is formed on a hard mask layer(11). A first spacer pattern extended in a first direction is formed on the hard mask layer. A second spacer pattern extended in a second direction is formed on the upper side of the first spacer pattern. The first carbon film is etched by using the first spacer pattern and the second spacer pattern as an etching barrier. A mesh type hard mask pattern is formed by etching the hard mask layer using the etched first carbon film as an etching barrier. A hole pattern is formed by etching a layer using the mesh type hard mask pattern as the etching barrier. |
