| 摘要 |
<p>A wafer inspection method and a wafer inspection apparatus are provided. The inspection method comprises: a detection light is generated to form a detection illumination spot (122) on a wafer (121) to be inspected; the wafer (121) to be inspected is scanned by the detection illumination spot (122); when particles (123,124) on the wafer (121) to be inspected are located in the detection illumination spot (122), the detection light is scattered to form scattered light; the scattered light generates scattered light signals (125,126) related with corresponding time (t1,t2); the distribution information of the particles (123,124) on the wafer (121) to be inspected is obtained according to the scattered light signals (125,126). The inspection apparatus comprises: a light source (100) for providing a detection light; a moveable and rotatable stage (102) for holding the wafer (121) to be inspected; a photodetector (106) for detecting with certain frequency; a data process unit (107) for obtaining the distribution information of the particles (123,124) on the wafer (121) based on the scattered light signals(125,126) related with corresponding time that detected by the photodetector (106).</p> |
