| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an amorphous carbon film suitably used as a hard mask, and method of manufacturing amorphous carbon film suitable for a protection film and a sealing film in a semiconductor device. <P>SOLUTION: A CVD device comprising a chamber having a plasma atmosphere forming region therein is prepared, a base substrate for film formation is disposed to face the plasma atmosphere and an amorphous carbon film is formed on the base substrate on the condition that the chamber inner pressure is set to 6.66 Pa or less, a bias to be applied through bias applying means to a stage on which the base substrate is mounted is set to 100 to 1500 W, a base substrate temperature in film formation is set to 200°C or less, the flow rate of raw material gas for film formation is set to 100 to 300 cc/min.(0°C, atmospheric pressure) and the flow rate of rare gas for forming the plasma atmosphere is set to 50 to 400 cc/min.(0°C, atmospheric pressure). <P>COPYRIGHT: (C)2013,JPO&INPIT |
