发明名称 |
Read transistor for single poly non-volatile memory using body contacted SOI device |
摘要 |
A read transistor for single poly non-volatile memory using a body contacted SOI transistor and a method of manufacturing the same is provided. The non-volatile random access memory is formed in silicon on insulator (SOI). The non-volatile random access memory includes a read field effect transistor (FET) having a body contact formed in the silicon of the SOI. The body contact is in electrical contact with a diffusion region under a gate of the read FET. |
申请公布号 |
US8299519(B2) |
申请公布日期 |
2012.10.30 |
申请号 |
US20100685335 |
申请日期 |
2010.01.11 |
申请人 |
CHOU ANTHONY I.;KUMAR ARVIND;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHOU ANTHONY I.;KUMAR ARVIND |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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