| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new zinc oxide semiconductor material which is suitable as a material for an electrode of a dye-sensitized solar cell; and to provide a method for producing the material concerned. <P>SOLUTION: In a method in which a zinc oxide semiconductor nanorod crystal is deposited by using a chemical bath deposition technique, the molar ratio of aluminum atoms and zinc atoms (Al/Zn) in a precipitation reaction liquid is adjusted to be in a range of 0.0001×10<SP POS="POST">-2</SP>to 10×10<SP POS="POST">-2</SP>. As the result of this, in the structure of an aluminum-doped zinc oxide nanorod, the diameter of the rod becomes large, and electronic conductivity in the crystal is improved. In addition, the crystal structure is made to be longer in a state, in which the high electronic conductivity of the aluminum-doped zinc oxide nanorod is kept, to simultaneously achieve low electric resistance and high open circuit voltage. <P>COPYRIGHT: (C)2013,JPO&INPIT |
