| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element which can improve a strength of the obtained element with preventing adhesion of a foreign material to an end of an active layer when removing a growth substrate by the LLO method. <P>SOLUTION: A manufacturing method of a semiconductor light-emitting element comprises: forming a sacrifice part within a width of a street part of a semiconductor laminate; applying wet etching for removing the sacrifice part together with a peripheral part thereof; and removing an etching residue remaining in the street. <P>COPYRIGHT: (C)2013,JPO&INPIT |
