发明名称 Light Emitting Device and Method for Manufacturing Thereof
摘要 A conductive layer serving as an auxiliary wiring is formed under a first electrode with a first insulating layer interposed therebetween, and the conductive layer and a second electrode are electrically connected to each other through an opening in the first insulating layer and the first electrode. A second insulating layer is formed over a sidewall of the opening so that the first electrode is not directly in contact with the second electrode in the opening. An EL layer is formed by evaporation in a state where a deposition target substrate is inclined to an evaporation source, so that the second insulating layer serves as an obstacle and a region where the EL layer is not formed by the evaporation and the conductive layer is exposed is formed in part of the opening in a self-aligned manner.
申请公布号 US2012256227(A1) 申请公布日期 2012.10.11
申请号 US201213439298 申请日期 2012.04.04
申请人 TSURUME TAKUYA;IKEDA HISAO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TSURUME TAKUYA;IKEDA HISAO
分类号 H01L51/52;H01L51/56 主分类号 H01L51/52
代理机构 代理人
主权项
地址