发明名称 E-Beam Enhanced Decoupled Source for Semiconductor Processing
摘要 A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes a plurality of power delivery components defined to deliver power to the plurality of fluid transmission pathways, so as to generate supplemental plasma within the plurality of fluid transmission pathways. The plurality of fluid transmission pathways are defined to supply reactive constituents of the supplemental plasma to the processing chamber.
申请公布号 US2012258607(A1) 申请公布日期 2012.10.11
申请号 US201213357044 申请日期 2012.01.24
申请人 HOLLAND JOHN PATRICK;VENTZEK PETER L.G.;SINGH HARMEET;SHINAGAWA JUN;KOSHIISHI AKIRA;LAM RESEARCH CORPORATION 发明人 HOLLAND JOHN PATRICK;VENTZEK PETER L.G.;SINGH HARMEET;SHINAGAWA JUN;KOSHIISHI AKIRA
分类号 H01L21/26;H01L21/3065 主分类号 H01L21/26
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