| 摘要 |
A semiconductor device includes a semiconductor layer with a trench dug downward from its surface, a source region formed on a surface layer portion adjacent to a first side of the trench in a prescribed direction, a drain region formed on the surface layer portion, adjacent to a second side of the trench opposite to the first side in the prescribed direction, a first insulating film on the bottom surface and the side surface of the trench, a floating gate stacked on the first insulating film and opposed to the bottom surface and the side surface of the trench through the first insulating film, a second insulating film formed on the floating gate, and a control gate at least partially embedded in the trench so that the portion embedded in the trench is opposed to the floating gate through the second insulating film.
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