发明名称 |
MONITORING METHOD OF PLASMA ETCHING PROCESS USING ACTINOMETRY |
摘要 |
PURPOSE: A monitoring method of a plasma etching process using actinometry is provided to measure the variation in an etch rate of the process by quantitatively analyzing the state change of plasma. CONSTITUTION: Processing gas is supplied to the inside of a plasma generating chamber. The processing gas contains fluorine. Plasma is generated. The amount of the plasma generated in the plasma generating chamber is measured using an optical emission spectroscope.
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申请公布号 |
KR20120111103(A) |
申请公布日期 |
2012.10.10 |
申请号 |
KR20110029408 |
申请日期 |
2011.03.31 |
申请人 |
RAINBOW CORPORATION |
发明人 |
HONG, SANG JEEN;KIM, BUM SOO;GU, JA MYUNG;LEE, JUN YONG |
分类号 |
H01L21/3065;H01L21/66 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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