发明名称 HEAT RADIATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: A heat radiation substrate and a manufacturing method thereof are provided to effectively remove heat generated from a chip by conducting the heat through an oxide layer having high thermal conductivity. CONSTITUTION: An oxide layer(102) is formed on one side or both sides of a metal plate(101). An insulating layer(103) is formed on the oxide layer. A circuit layer(104) is formed on the insulating layer. The circuit layer includes a connection pad and a circuit pattern. The insulating layer and the circuit layer have an opening(107) for mounting a chip.
申请公布号 KR20120110419(A) 申请公布日期 2012.10.10
申请号 KR20110028261 申请日期 2011.03.29
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 SEO, KI HO;SHIN, SANG HYUN;HEO, CHEOL HO
分类号 H01L33/64 主分类号 H01L33/64
代理机构 代理人
主权项
地址