| 摘要 |
<P>PROBLEM TO BE SOLVED: To perform copper filling through a damascene process without compromising the integrity of a copper seed layer. <P>SOLUTION: A method for making semiconductor interconnect features in a dielectric layer includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then treated to remove an oxidized layer from over the copper seed layer. The next process in the method is electroplating the treated copper seed layer with a copper fill layer. The copper fill layer is configured to fill the etched features of the dielectric layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
