NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to obtain a channel length of a memory cell without increasing the width of a floating gate. CONSTITUTION: A substrate(100) has an active area(100A) defined by an element isolation film(110). A floating gate(130) is projected to the top of the substrate while touching one sidewall of the active area. An inter gate insulating film(140) is formed on the floating gate. A control gate(150) is formed between the intergate insulating film. The control gate touches the sidewall of the floating gate while having an interposed intergate insulating film.