发明名称 |
PLASMA NITRIDING METHOD, PLASMA NITRIDING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A plasma nitriding method includes placing, in a processing chamber, a target object having a structure including a first portion containing a metal and a second portion containing silicon to expose surfaces of the first and the second portion; and performing a plasma process on the target object to selectively nitride the surface of the first portion such that a metal nitride film is selectively formed on the surface of the first portion. Further, the first portion contains tungsten, and a nitrogen-containing plasma is generated by supplying a nitrogen-containing gas into the processing chamber and setting an internal pressure of the processing chamber in a range from 133 Pa to 1333 Pa. The surface of the first portion is selectively nitrided without nitriding the surface of the second portion by the nitrogen-containing plasma such that a tungsten nitride film is formed on the surface of the first portion.
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申请公布号 |
US2012252209(A1) |
申请公布日期 |
2012.10.04 |
申请号 |
US201213433746 |
申请日期 |
2012.03.29 |
申请人 |
KABE YOSHIRO;SATO YOSHIHIRO;TOKYO ELECTRON LIMITED |
发明人 |
KABE YOSHIRO;SATO YOSHIHIRO |
分类号 |
H01L21/768;C23C14/06;H01L21/318 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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