THIN FILM TRANSISTOR AND MANUFACTURING METHOD FOR SAME, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME, AND DISPLAY DEVICE

摘要

An object of the present invention is to provide a thin film transistor fabricating method including a simplified step of forming contact holes. This method involves previously removing a gate insulating film (115) on a gate electrode (110) which is not covered with a channel layer (120) in a TFT (100). Hence, an insulating film formed on the gate electrode (110) which is not covered with the channel layer (120) becomes equal in thickness to an insulating film formed on a source region (120a) and a drain region (120b). Therefore, a contact hole (155) reaching a surface of the gate electrode (110) can be formed simultaneously with a contact hole (135a) reaching a surface of the source region (120a) and a contact hole (135b) reaching a surface of the drain region (120b).