发明名称 |
Fabrication method for an organic thin film transistor substrate |
摘要 |
An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
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申请公布号 |
US8278648(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20070781109 |
申请日期 |
2007.07.20 |
申请人 |
CHOI TAE YOUNG;KIM BO SUNG;SONG KEUN KYU;CHO SEUNG HWAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI TAE YOUNG;KIM BO SUNG;SONG KEUN KYU;CHO SEUNG HWAN |
分类号 |
H01L29/08;H01L51/10 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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